JPH0456765B2 - - Google Patents
Info
- Publication number
- JPH0456765B2 JPH0456765B2 JP60039532A JP3953285A JPH0456765B2 JP H0456765 B2 JPH0456765 B2 JP H0456765B2 JP 60039532 A JP60039532 A JP 60039532A JP 3953285 A JP3953285 A JP 3953285A JP H0456765 B2 JPH0456765 B2 JP H0456765B2
- Authority
- JP
- Japan
- Prior art keywords
- pbn
- article
- gas
- graphite
- nodule
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Structural Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Ceramic Products (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Inorganic Insulating Materials (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60039532A JPS61201607A (ja) | 1985-02-28 | 1985-02-28 | 熱分解窒化ホウ素物品およびその製造方法 |
US06/831,247 US4690841A (en) | 1985-02-28 | 1986-02-19 | Pyrolytic boron nitride article |
DE8686102536T DE3666800D1 (en) | 1985-02-28 | 1986-02-27 | Pyrolytic boron nitride article and method for producing the same |
EP86102536A EP0193192B1 (en) | 1985-02-28 | 1986-02-27 | pyrolytic boron nitride article and method for producing the same |
US07/042,148 US4849146A (en) | 1985-02-28 | 1987-04-24 | Method for producing pyrolytic boron nitride article |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60039532A JPS61201607A (ja) | 1985-02-28 | 1985-02-28 | 熱分解窒化ホウ素物品およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61201607A JPS61201607A (ja) | 1986-09-06 |
JPH0456765B2 true JPH0456765B2 (en]) | 1992-09-09 |
Family
ID=12555653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60039532A Granted JPS61201607A (ja) | 1985-02-28 | 1985-02-28 | 熱分解窒化ホウ素物品およびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US4690841A (en]) |
EP (1) | EP0193192B1 (en]) |
JP (1) | JPS61201607A (en]) |
DE (1) | DE3666800D1 (en]) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4868093A (en) * | 1987-05-01 | 1989-09-19 | American Telephone And Telegraph Company, At&T Bell Laboratories | Device fabrication by X-ray lithography utilizing stable boron nitride mask |
DE3841326A1 (de) * | 1988-12-08 | 1990-06-13 | Umbert Schulz | Schutzgasduese fuer einen schutzgasschweissbrenner mit einer auf dem stromkontaktrohr vorgesehenen isolierhuelse |
US5182149A (en) * | 1990-04-30 | 1993-01-26 | Praxair S.T. Technology, Inc. | Boron nitride boat and process for producing it |
US5032366A (en) * | 1990-04-30 | 1991-07-16 | Union Carbide Coatings Service Technology Corporation | Boron nitride boat and process for producing it |
WO1992002662A2 (en) * | 1990-08-08 | 1992-02-20 | Union Carbide Coatings Service Technology Corporation | Process for forming crack-free pyrolytic boron nitride on a carbon structure and article |
DE4030540C1 (en]) * | 1990-09-27 | 1991-11-28 | Erno Raumfahrttechnik Gmbh, 2800 Bremen, De | |
US5674317A (en) * | 1992-07-02 | 1997-10-07 | Shin-Etsu Chemical Co., Ltd. | Vessel made from pyrolytic boron nitride |
JP2565141B2 (ja) * | 1994-09-02 | 1996-12-18 | 株式会社日立製作所 | 自動車における負荷分担制御方法 |
CN1047209C (zh) * | 1994-09-28 | 1999-12-08 | 先进陶瓷公司 | 高密度闪蒸器 |
JP2720381B2 (ja) * | 1995-10-03 | 1998-03-04 | アドバンス・セラミックス・インターナショナル コーポレーション | 任意の電気抵抗率を有する熱分解窒化ホウ素成形体の製造方法 |
JP3724870B2 (ja) * | 1996-02-15 | 2005-12-07 | 信越化学工業株式会社 | 熱分解窒化ホウ素ルツボ |
JP3758755B2 (ja) * | 1996-08-13 | 2006-03-22 | 信越化学工業株式会社 | 熱分解窒化ホウ素容器およびその製造方法 |
US6197391B1 (en) * | 1996-11-18 | 2001-03-06 | Shin-Etsu Chemical Co., Ltd. | Pyrolytic boron nitride container and manufacture thereof |
US5851588A (en) * | 1996-11-21 | 1998-12-22 | Eaton Corporation | Method for making open-mesh carbon-fiber-reinforced carbon composite material |
JP3212522B2 (ja) * | 1996-12-27 | 2001-09-25 | 信越化学工業株式会社 | 分子線エピタキシー用熱分解窒化硼素るつぼ |
US6369493B1 (en) * | 1999-04-27 | 2002-04-09 | Applied Materials, Inc. | Microwave plasma applicator having a thermal transfer medium between a plasma containing tube and a cooling jacket |
US6624423B2 (en) * | 2002-01-14 | 2003-09-23 | General Electric Company | Semiconductor detector for thermal neutrons based on pyrolytic boron nitride |
US8858708B1 (en) | 2005-01-03 | 2014-10-14 | The United States Of America As Represented By The Secretary Of The Air Force | Polycrystalline III-nitrides |
US20220212998A1 (en) | 2019-04-17 | 2022-07-07 | Materion Corporation | Crucibles and compositions and processes for making same |
CN114196923B (zh) * | 2022-02-18 | 2022-05-20 | 北京博宇半导体工艺器皿技术有限公司 | 氮化硼坩埚模具、制备方法及脱模方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2801903A (en) * | 1953-09-16 | 1957-08-06 | Norton Co | Process for the manufacture of boron nitride |
US3152006A (en) * | 1961-06-29 | 1964-10-06 | High Temperature Materials Inc | Boron nitride coating and a process of producing the same |
US3825440A (en) * | 1971-07-01 | 1974-07-23 | Us Army | Vapor deposition method |
US4058579A (en) * | 1975-02-27 | 1977-11-15 | Union Carbide Corporation | Process for producing an improved boron nitride crucible |
US3986822A (en) * | 1975-02-27 | 1976-10-19 | Union Carbide Corporation | Boron nitride crucible |
SU596659A1 (ru) * | 1976-06-30 | 1978-02-08 | Предприятие П/Я М-5409 | Способ защиты графитовых изделий от разрушени |
US4188194A (en) * | 1976-10-29 | 1980-02-12 | General Electric Company | Direct conversion process for making cubic boron nitride from pyrolytic boron nitride |
DE2934011A1 (de) * | 1979-08-22 | 1981-03-26 | André Etienne de Dr. Lausanne Rudnay | Vorrichtung zum aufdampfen von elektrisch leitenden stoffen (metallen) im hochvakuum |
US4402925A (en) * | 1981-09-28 | 1983-09-06 | Union Carbide Corporation | Porous free standing pyrolytic boron nitride articles |
JPS60191094A (ja) * | 1984-03-08 | 1985-09-28 | Hitachi Cable Ltd | Bνルツボの前処理方法 |
-
1985
- 1985-02-28 JP JP60039532A patent/JPS61201607A/ja active Granted
-
1986
- 1986-02-19 US US06/831,247 patent/US4690841A/en not_active Expired - Lifetime
- 1986-02-27 DE DE8686102536T patent/DE3666800D1/de not_active Expired
- 1986-02-27 EP EP86102536A patent/EP0193192B1/en not_active Expired
-
1987
- 1987-04-24 US US07/042,148 patent/US4849146A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS61201607A (ja) | 1986-09-06 |
DE3666800D1 (en) | 1989-12-14 |
EP0193192B1 (en) | 1989-11-08 |
US4849146A (en) | 1989-07-18 |
EP0193192A3 (en) | 1986-12-10 |
US4690841A (en) | 1987-09-01 |
EP0193192A2 (en) | 1986-09-03 |
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